Product Summary

The GT15Q101 is an insulated gate bipolar transistor. It is suitable for high power switching applicatiosn and motor control applications.

Parametrics

GT15Q101 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current, IC: 15A; ICP: 30A; (4)collector power dissipation, PC: 150W; (5)junction temeprature, Tj: 150℃; (6)storage temeprature range, Tstg: -55 to 150℃.

Features

GT15Q101 features: (1)high input impedance; (2)high speed; (3)low saturation voltage; (4)enhancement mode.

Diagrams

GT15Q101 dimensions

GT15J301
GT15J301

Other


Data Sheet

Negotiable 
GT15J301(Q)
GT15J301(Q)

Toshiba

IGBT Transistors IGBT, 600V, 15A

Data Sheet

Negotiable 
GT15J311(Q)
GT15J311(Q)

Toshiba

IGBT Transistors IGBT, 600V, 15A

Data Sheet

Negotiable 
GT15J321
GT15J321

Other


Data Sheet

Negotiable 
GT15J321(Q)
GT15J321(Q)

Toshiba

IGBT Transistors 600V/15A DIS+FRD

Data Sheet

0-1: $2.24
1-10: $1.79
10-100: $1.52
100-250: $1.35
GT15J331
GT15J331

Other


Data Sheet

Negotiable