Product Summary
The GT15Q101 is an insulated gate bipolar transistor. It is suitable for high power switching applicatiosn and motor control applications.
Parametrics
GT15Q101 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)gate-emitter voltage, VGES: ±20V; (3)collector current, IC: 15A; ICP: 30A; (4)collector power dissipation, PC: 150W; (5)junction temeprature, Tj: 150℃; (6)storage temeprature range, Tstg: -55 to 150℃.
Features
GT15Q101 features: (1)high input impedance; (2)high speed; (3)low saturation voltage; (4)enhancement mode.
Diagrams

|  |  GT15J301 |  Other |  |  Data Sheet |  Negotiable |  | ||||||||||||
|  |  GT15J301(Q) |  Toshiba |  IGBT Transistors IGBT, 600V, 15A |  Data Sheet |  Negotiable |  | ||||||||||||
|  |  GT15J311(Q) |  Toshiba |  IGBT Transistors IGBT, 600V, 15A |  Data Sheet |  Negotiable |  | ||||||||||||
|  |  GT15J321 |  Other |  |  Data Sheet |  Negotiable |  | ||||||||||||
|  |  GT15J321(Q) |  Toshiba |  IGBT Transistors 600V/15A DIS+FRD |  Data Sheet |  
 |  | ||||||||||||
|  |  GT15J331 |  Other |  |  Data Sheet |  Negotiable |  | ||||||||||||
 (China (Mainland))
 (China (Mainland)) 
                         
                        
 
                                    




