(China (Mainland))
Product Summary
The F4-75R12KS4 is an IGBT-Module.
Parametrics
F4-75R12KS4 absolute maximum ratings: (1)collector emitter voltage: 1200V; (2)DC collector current: 75A; (3)repetitive peak collector current: 150A; (4)total power dissipation: 500W; (5)gate emitter peak voltage: ±20V.
Features
F4-75R12KS4 features: (1)forward voltage: 2.00V; (2)peak reverse recovery current: 43A; (3)recovered charge: 4.50μC; (4)reverse recovery energy: 1.70 mJ; (5)thermal resistance, junction to case: 0.55K/W.
Diagrams
| Image | Part No | Mfg | Description |  |
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 F4-75R12KS4 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 100A |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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F4-75R06W1E3 |
Infineon Technologies |
IGBT Modules N-CH 600V 100A |
Data Sheet |
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F4-75R12KS4 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 100A |
Data Sheet |
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F4-75R12MS4 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 100A |
Data Sheet |
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