Product Summary

The BSM25GD120DN2 is an IGBT Power Module.

Parametrics

BSM25GD120DN2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kW, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ±20V; (4)DC collector current, IC: 35A when TC = 25℃; 25A when TC = 80℃; (5)Pulsed collector current, tp = 1 ms, ICpuls: 70A when TC = 25℃; 50A when TC = 80℃; (6)Power dissipation per IGBT TC = 25℃, Ptot: 200W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -40 to +125℃; (9)Thermal resistance, chip case RthJC: ≤0.6 K/W; (10)Diode thermal resistance, chip case, RthJCD: ≤ 1K/W; (11)Insulation test voltage, t = 1min, Vis: 2500 Vac; (12)Creepage distance: 16 mm; (13)Clearance: 11mm; (14)DIN humidity category, DIN 40 040: F sec; (15)IEC climatic category, DIN IEC 68-1: 40/125/56 sec.

Features

BSM25GD120DN2 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

BSM25GD120DN2 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM25GD120DN2
BSM25GD120DN2

Infineon Technologies

IGBT Modules 1200V 25A FL BRIDGE

Data Sheet

0-1: $47.80
1-5: $45.41
5-10: $43.01
BSM25GD120DN2E3224
BSM25GD120DN2E3224

Infineon Technologies

IGBT Modules N-CH 1.2KV 35A

Data Sheet

0-1: $47.80
1-5: $45.41
5-10: $43.01