Product Summary

The MRF9060L is a RF Power field effect transistor designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of the device makes it ideal for large- signal, common-source amplifier applications in 26 volt base station equipment.

Parametrics

MRF9060L maximum ratings: (1)Drain-Source Voltage, VDSS: - 0.5, +65 Vdc; (2)Gate-Source Voltage, VGS: - 0.5, +15 Vdc; (3)Total Device Dissipation @ TC = 25℃, PD: 159W(MRF9060LR1); (4)Total Device Dissipation Derate above 25℃: 0.91 W/℃(MRF9060LR1); (5)Total Device Dissipation @ TC = 25℃, PD: 219W(MRF9060LSR1); (6)Total Device Dissipation Derate above 25℃: 1.25 W/℃(MRF9060LSR1); (7)Storage Temperature Range, Tstg: - 65 to +150 ℃; (8)Case Operating Temperature, TC: 150 ℃; (9)Operating Junction Temperature, TJ: 200 ℃.

Features

MRF9060L features: (1)Integrated ESD Protection; (2)Designed for Maximum Gain and Insertion Phase Flatness; (3)Excellent Thermal Stability; (4)Characterized with Series Equivalent Large-Signal Impedance Parameters; (5)Low Gold Plating Thickness on LeadsL Suffix Indicates 40u Nominal; (6)RoHS Compliant; (7)In Tape and ReelR1 Suffix = 500 Units per 32 mm, 13 inch Reel.

Diagrams

MRF9060L test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF9060LR1
MRF9060LR1

Freescale Semiconductor

Transistors RF MOSFET Power 60W 1GHZ RFPWR FET NI360

Data Sheet

0-358: $26.96
358-500: $25.60
MRF9060LR5
MRF9060LR5

Freescale Semiconductor

Transistors RF MOSFET Power 60W 1GHZ RFPWR FET NI360

Data Sheet

Negotiable 
MRF9060LSR5
MRF9060LSR5

Freescale Semiconductor

Transistors RF MOSFET Power 60W RF PWR FET NI360LS

Data Sheet

Negotiable 
MRF9060LSR1
MRF9060LSR1

Freescale Semiconductor

Transistors RF MOSFET Power 60W 945MHZ NI360S LOW AU

Data Sheet

Negotiable