Product Summary
The BSM200GA120DN2 is an IGBT power module.
Parametrics
BSM200GA120DN2 maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kW VCGR: 1200 V; (3)Gate-emitter voltage VGE ± 20 V; (4)DC collector current TC = 25 ℃: 300A; (5)TC = 80 ℃: 200A; (6)Pulsed collector current, tp = 1 ms ICpuls TC = 25 ℃: 600A; TC = 80 ℃: 400A; (7)Diode thermal resistance, chip case RthJCD ≤ 0.15; (8)Insulation test voltage, t = 1min. Vis 2500 Vac; (9)Creepage distance - 20 mm; (10)Clearance - 11; (11)DIN humidity category, DIN 40 040 - F sec; (12)IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56.
Features
BSM200GA120DN2 features: (1)Single switch; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM200GA120DN2 |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2C |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2F |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2FS |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2FS_E3256 |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2S |
Infineon Technologies |
IGBT Transistors 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2S_E3256 |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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