(China (Mainland))
Product Summary
The FZ400R12KE3 is a 62mm C-series module with the fast IGBT2 for high-frequency switching.
Parametrics
FZ400R12KE3 maximum rated values: (1)collector-emitter voltage at Tvj=25℃, VCES: 1200v; (2)DC-collector current at Tc=25℃, Tvj=150℃, IC: 650A; (3)repetitive peak collector current at tp=1ms, ICRM: 800A; (4)total power dissipation at Tc=25℃, Tvj=150℃, Ptot: 2250W; (5)gate-emitter peak voltage, VGES: ±20 V.
Features
FZ400R12KE3 specifications: (1)Configuration: Single Dual Emitter; (2)Collector- Emitter Voltage VCEO Max: 1200 V; (3)Continuous Collector Current at 25 C: 650 A; (4)Maximum Operating Temperature: + 125℃; (5)Package / Case: 62MM; (6)Maximum Gate Emitter Voltage: +/- 20 V; (7)Minimum Operating Temperature: - 40℃; (8)Mounting Style: Screw; (9)Standard Pack Qty: 10.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FZ400R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 400A SINGLE |
Data Sheet |
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FZ400R12KE3B1 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 650A |
Data Sheet |
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FZ400R12KE3S |
Infineon Technologies |
IGBT Transistors 1200V 400A SINGLE |
Data Sheet |
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