(China (Mainland))
Product Summary
The BSM50GD120DN2 is an IGBT Power Module.
Parametrics
BSM50GD120DN2 absolute maximum ratings: (1)Collector-emitter voltage:1200V; (2)Collector-gate voltage, RGE = 20 kΩ:1200V; (3)Gate-emitter voltage:±20V; (4)DC collector current: TC = 25 ℃:72A, TC = 80 ℃:50A; (5)Pulsed collector current, tp = 1 ms: TC = 25 ℃:144A, TC = 80 ℃:100A; (6)Power dissipation per IGBT, TC = 25℃:350W; (7)Chip temperature:+150℃; (8)Storage temperature:-55℃ to +150℃.
Features
BSM50GD120DN2 features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BSM50GD120DN2 |
Infineon Technologies |
IGBT Modules 1200V 50A FL BRIDGE |
Data Sheet |
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BSM50GD120DN2E3226 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 50A |
Data Sheet |
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BSM50GD120DN2G |
Infineon Technologies |
IGBT Modules 1200V 50A 3-PHASE |
Data Sheet |
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