(China (Mainland))
Product Summary
The BSM181F is a Power module.
Parametrics
BSM181F absolute maximum ratings: (1)Drain-source voltage VDS 800 V; (2)Drain-gate voltage, RGS = 20 kΩ VDGR: 800V; (3)Gate-source voltage VGS ± 20V; (4)Continuous drain current, TC = 25℃ ID: 34 A; (5)Pulsed drain current, TC = 25℃ ID puls: 136A; (6)Operating and storage temperature range Tj, Tstg: – 55 to + 150 ℃; (7)Power dissipation, TC = 25℃ Ptot: 700 W; (8)Thermal resistance Chip-case Rth JC: ≤ 0.18K/W; (9)Insulation test voltage, t = 1 min. Vis: 2500 Vac; (10)Creepage distance, drain-source: 16 mm; (11)Clearance, drain-source: 11.
Features
BSM181F features: (1)Power module; (2)Single switch; (3)FREDFET; (4)N channel; (5)Enhancement mode; (6)Package with insulated metal base plate.
Diagrams
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 BSM181F |
Other |
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Data Sheet |
Negotiable |
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Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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