Product Summary
The MRF421 is a RF line NPN silicon RF power transistor. The device is designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
Parametrics
MRF421 absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 20 Vdc; (2)Collector–Base Voltage, VCBO: 45 Vdc; (3)Emitter–Base Voltage, VEBO: 3.0 Vdc; (4)Collector Current, Continuous, IC: 20 Adc; (5)Withstand Current, 10 s:30 Adc; (6)Total Device Dissipation, PD: 290W at TC = 25℃; 1.66W/℃; (7)Storage Temperature Range, Tstg: –65 to +150℃.
Features
MRF421 features: (1)Specified 12.5 Volt, 30 MHz Characteristics: Output Power = 100 W (PEP); Minimum Gain = 10 dB; Efficiency = 40%; (2)Intermodulation Distortion @ 100 W (PEP): IMD = –30 dB (Min); (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR.
Diagrams
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MRF421 |
Other |
Data Sheet |
Negotiable |
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