Product Summary
The BSM75GD120DN2 is an IGBT Power Module.
Parametrics
BSM75GD120DN2 absolute maximum ratings: (1)Collector-emitter voltage:1200V; (2)Collector-gate voltage, RGE = 20 kΩ:1200V; (3)Gate-emitter voltage:±20V; (4)DC collector current: TC = 25 ℃:103A, TC = 80 ℃:75A; (5)Pulsed collector current, tp = 1 ms: TC = 25 ℃:206A, TC = 80 ℃:150A; (6)Power dissipation per IGBT, TC = 25℃:520W; (7)Chip temperature:+150℃; (8)Storage temperature:-55℃ to +150℃.
Features
BSM75GD120DN2 features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM75GD120DN2 |
Infineon Technologies |
IGBT Modules 1200V 75A 3-PHASE |
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