Product Summary
The BSM75GD120DN2 is an IGBT Power Module.
Parametrics
BSM75GD120DN2 absolute maximum ratings: (1)Collector-emitter voltage:1200V; (2)Collector-gate voltage, RGE = 20 kΩ:1200V; (3)Gate-emitter voltage:±20V; (4)DC collector current: TC = 25 ℃:103A, TC = 80 ℃:75A; (5)Pulsed collector current, tp = 1 ms: TC = 25 ℃:206A, TC = 80 ℃:150A; (6)Power dissipation per IGBT, TC = 25℃:520W; (7)Chip temperature:+150℃; (8)Storage temperature:-55℃ to +150℃.
Features
BSM75GD120DN2 features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams

| Image | Part No | Mfg | Description |  | Pricing (USD) | Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|  |  BSM75GD120DN2 |  Infineon Technologies |  IGBT Modules 1200V 75A 3-PHASE |  Data Sheet |  
 |  | ||||||||||||
| Image | Part No | Mfg | Description |  | Pricing (USD) | Quantity | ||||||||||||
|  |  BSM75GAL120DN2 |  Infineon Technologies |  IGBT Modules 1200V 75A CHOPPER |  Data Sheet |  
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|  |  BSM75GAR120DN2 |  Infineon Technologies |  IGBT Transistors 1200V 100A GAR CH |  Data Sheet |  
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|  |  BSM75GB120DLC |  Infineon Technologies |  IGBT Modules 1200V 75A DUAL |  Data Sheet |  
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|  |  BSM75GB120DN2 |  Infineon Technologies |  IGBT Modules 1200V 75A DUAL |  Data Sheet |  
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|  |  BSM75GB120DN2_E3223 |  Infineon Technologies |  IGBT Modules N-CH 1.2KV 105A |  Data Sheet |  
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|  |  BSM75GB120DN2_E3223c-Se |  Infineon Technologies |  IGBT Modules IGBT 1200V 75A |  Data Sheet |  
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 (China (Mainland))
 (China (Mainland)) 
                         
                        
 
                                    




