Product Summary
The BSM100GB60DLC is an IGBT Module.
Parametrics
BSM100GB60DLC maximum ratings: (1)Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES: 600 V; (2)Kollektor-Dauergleichstrom Tc= 70℃ IC,nom: 100 A; (3)DC-collector current Tc= 25℃ IC: 130 A; (4)Periodischer Kollektor Spitzenstrom repetitive peak collector current tP= 1ms, Tc= 70℃ ICRM: 200 A; (5)Gesamt-Verlustleistung total power dissipation Tc= 25℃, Transistor Ptot: 445 W; (6)Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGES: +/- 20V V; (7)Dauergleichstrom DC forward current IF: 100 A; (8)Periodischer Spitzenstrom repetitive peak forw. current tP= 1ms IFRM: 200 A; (9)Grenzlastintegral der Diode I2t - value, Diode VR= 0V, tp= 10ms, Tvj= 125℃ I2t: 1.250 A2s; (10)Isolations-Prüfspannung insulation test voltage RMS, f= 50Hz, t= 1min VISOL: 2,5 kV.
Features
BSM100GB60DLC features: (1)Kollektor-Emitter IC= 100A, VGE= 15V, Tvj= 25℃ VCE sat: 1,95V typ 2,45 V max; (2)collector-emitter saturation voltage IC= 100A, VGE= 15V, Tvj= 125℃ VCE sat: 2,20 V; (3)Gate-Schwellenspannung gate threshold voltage IC= 1,5mA, VCE= VGE, Tvj= 25℃ 4,5 to 6,5 V 5,5 V typ; (4)Kollektor-Emitter Reststrom VCE= 600V, VGE= 0V, Tvj= 25℃ ICES: 1μA typ 500 μA max; (5)collector-emitter cut-off current VCE= 600V, VGE= 0V, Tvj= 125℃: 1mA; (6)Gate-Emitter Reststrom gate-emitter leakage current VCE= 0V, VGE= 20V, Tvj= 25℃ IGES: 400 nA.
Diagrams

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                            ![]() BSM100GB60DLC  | 
                            ![]() Infineon Technologies  | 
                            ![]() IGBT Modules 600V 100A DUAL  | 
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| Image | Part No | Mfg | Description | ![]()  | 
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                            ![]() BSM100GAL120DLCK  | 
                            ![]() Infineon Technologies  | 
                            ![]() IGBT Modules 1200V 100A CHOPPER  | 
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                            ![]() BSM100GAL120DN2  | 
                            ![]() Infineon Technologies  | 
                            ![]() IGBT Modules 1200V 100A CHOPPER  | 
                            ![]() Data Sheet  | 
                            ![]() Negotiable  | 
                            
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![]()  | 
                            ![]() BSM100GAR120DN2  | 
                            ![]() Infineon Technologies  | 
                            ![]() IGBT Transistors 1200V 100A DUAL  | 
                            ![]() Data Sheet  | 
                            ![]() Negotiable  | 
                            
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![]()  | 
                            ![]() BSM100GB120DLC  | 
                            ![]() Infineon Technologies  | 
                            ![]() IGBT Modules 1200V 100A DUAL  | 
                            ![]() Data Sheet  | 
                            ![]() 
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                            	 | 
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![]()  | 
                            ![]() BSM100GB120DLCK  | 
                            ![]() Infineon Technologies  | 
                            ![]() IGBT Modules 1200V 100A DUAL  | 
                            ![]() Data Sheet  | 
                            ![]() 
  | 
                            
                            	 | 
                      ||||||||||||
![]()  | 
                            ![]() BSM100GB120DN2  | 
                            ![]() Infineon Technologies  | 
                            ![]() IGBT Modules 1200V 100A DUAL  | 
                            ![]() Data Sheet  | 
                            ![]() 
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                            	 | 
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 (China (Mainland)) 
                         
                        
                                    







